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| TEMPFET(R) BTS 121 A Features q q q q q N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 121A VDS 100 V ID 22 A RDS(on) 0.1 Package TO-220AB Ordering Code C67078-S5010-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 25 C ISO drain current TC = 85 C, VDS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 100 100 10 22 3.5 88 68 W 800 / 1000 95 - 55 ... + 150 E 55/150/56 K/W 1.32 75 C - A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg - - TC = 25 C Tj = - 55 ... + 150 C VDS 50 V / VDS 15 V Power dissipation Short circuit dissipation, Tj = - 55 ... + 150 C Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA 1 19.02.04 TEMPFET(R) BTS 121 A Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit V(BR)DSS 100 - 2.0 - 2.5 V VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 100 Tj = 25 C Tj = 125 C Gate-source leakage current VGS = 20 V, VDS = 0 Tj = 25 C Tj = 150 C Drain-source on-state resistance VGS = 4.5 V, ID = 9.5 A Dynamic Characteristics Forward transconductance VDS 2 x ID x RDS(on)max, ID = 9.5 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz Turn-on time ton, (ton = td(on) + tr) VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 Turn-off time toff, (toff = td(off) + tf) VCC = 30 V, VGS = 5 V, ID = 3 A, RGS = 50 VGS(th) 1.5 I DSS - - 0.1 10 1.0 100 A I GSS - - 10 2 0.085 100 4 0.1 nA A - RDS(on) gfs 8 14 1200 320 160 25 110 210 100 - S pF - 1500 580 260 40 170 270 130 ns Ciss Coss - Crss - td(on) tr td(off) tf - - - - 2 19.02.04 TEMPFET(R) BTS 121 A Electrical Characteristics (cont'd) at Tj = 25 CC, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 22 A, VGS = 0 V Reverse recovery time I F = I S, diF/dt = 100 A/s, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 A/s, VR = 30 V Temperature Sensor Forward voltage I TS(on) = 5 mA, Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C Forward current Tj = - 55 ... + 150 C Sensor override, tp 100 s Tj = - 55 ... + 160 C Holding current, VTS(off) = 5 V, Switching temperature VTS = 5 V Turn-off time Values typ. max. Unit IS ISM VSD - - - - - 1.2 150 0.58 19 76 A V 1.5 ns - C - t rr - Q rr - VTS(on) - - 1.3 - - - 0.1 0.2 - - 1.4 10 V ITS(on) - - 5.0 600 0.5 0.3 mA Tj = 25 C Tj = 150 C IH TTS(on) 0.05 0.05 150 C - s 0.5 2.5 toff VTS = 5 V, ITS(on) = 2 mA 3 19.02.04 TEMPFET(R) BTS 121 A Examples for short-circuit protection at Tj = - 55 ... + 150 C, unless otherwise specified. Parameter Symbol 1 Examples 2 - Unit Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time Tj = 25 C, before short circuit VDS VGS ISC PSC tSC(off) 15 5.5 66.7 1000 25 30 4.0 26.7 800 25 - - - - - V A W ms Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = - 55 ... + 150 C Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = - 55 ... + 150 C 4 19.02.04 TEMPFET(R) BTS 121 A Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 s Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 C 5 19.02.04 TEMPFET(R) BTS 121 A Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 4.5 A, VGS = 9.5 V Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA (spread) Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 s, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 s, VDS = 25 V 6 19.02.04 TEMPFET(R) BTS 121 A Continuous drain current ID = f (TC) Parameter: VGS 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 s (spread) Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz 7 19.02.04 TEMPFET(R) BTS 121 A Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T 8 19.02.04 TEMPFET(R) BTS 121 A TO 220 AB Standard Ordering Code C67078-S5010-A2 TO 220 AB SMD Version E 3045 Ordering Code C67078-S5010-A5 9.9 9.5 2.8 3.7 4.4 1.3 12.8 17.5 1 4.6 3) 9.2 1) 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 13.5 2) 15.6 9 19.02.04 TEMPFET(R) BTS 121 A Edition 04.97 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 Munchen, Germany (c) Infineon Technologies AG 2000. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 19.02.04 |
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